How does post-deposition recrystallization with indium bromide affect the structural and electrical properties of Cu(In,Ga)Se2 (CIGS) thin films?

Label:chem

Topic
Cu(In,Ga)Se2 (CIGS) thin films are widely used in photovoltaic applications due to their tunable bandgap and high absorption coefficient. Post-deposition treatments, such as recrystallization, can enhance the performance of these films by improving their structural and electrical properties.
Answer
Post-deposition recrystallization with indium bromide (InBr3) at 400°C and 500°C significantly enhances the structural and electrical properties of CIGS thin films. The treatment leads to larger grain sizes and higher electrical conductivity. For instance, the grain size increases, as evidenced by the decrease in the full width at half maximum (FWHM) of the XRD peaks, and the electrical conductivity improves from 1.9×10⁻³ ohm⁻¹·cm⁻¹ for as-deposited films to 35.7×10⁻³ ohm⁻¹·cm⁻¹ for films annealed at 400°C with InBr3. Additionally, the carrier concentration and mobility also increase, contributing to the improved conductivity.
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